| PART |
Description |
Maker |
| GH5C105D3A |
780 nm, LASER DIODE
|
SHARP ELECTRONICS CORP
|
| GH6CD05B3A |
780 nm, LASER DIODE
|
SHARP ELECTRONICS CORP
|
| SLU301VR-2-01 SLU301VR-1-02 SLU301VR-24-02 SLU301V |
810 nm, LASER DIODE
785 nm, LASER DIODE
807 nm, LASER DIODE
798 nm, LASER DIODE
|
|
| Q62702-P358 Q62702-P1617 SPL_CG SPLCG85 SPLCG98 SP |
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 850 nm, LASER DIODE
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 激光二极管W连续类激光产品的Submount 1.0
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NDL7910PC NDL7603P NDL7910P |
InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION
1 550 nm OPTICAL FIBER COMMUNICATIONS EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH APPLICATIONS
Optical Fiber Communication Laser Diode(光纤通信激光二极管)
|
NEC[NEC]
NEC Corp.
|
| NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
| SLD105UL |
Low Power GaAIAs Laser Diode(低功耗镓铝砷激光二极管)
GaAlAs Laser Diode
|
SONY[Sony Corporation]
|
| DL-3150-101 DL-3150-102 |
Infrared Laser Diode Compact Flat Package Type Laser Diode
|
SANYO
|
| DL-3147-141 DL-3147-241 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
SANYO
|
